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2N5551 - NXP

Description: NPN high-voltage transistors 300 mA,160 V,50 nA,30 pF, 300 MHz −65 +150 °C

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Symbol
2N5551 - NXP - PCB symbol
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PCB Footprints
2N5551 - NXP PCB footprint - Other - Other - SOT54_2025-2
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3D Models
2N5551 - NXP - 3D model - Other - SOT54_2025-2
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2N5551 Details

  • Manufacturer Part Number:

    2N5551

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Package Description:

    TO-92, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Base Capacitance-Max:

    6 pF

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.2 V

2N5551 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N5551 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure the 2N5551 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (VCE) is within the specified maximum rating. Additionally, you should also ensure that the device is operated within the recommended current and power dissipation limits.
  • The recommended storage temperature range for the 2N5551 is typically between -40°C to 150°C, although this may vary depending on the specific package type and storage conditions. It's essential to follow proper storage and handling procedures to prevent damage to the device.
  • Yes, the 2N5551 can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the maximum current and voltage ratings. You should also ensure that the device is properly biased and that the switching frequency is within the recommended range.
  • To handle ESD protection for the 2N5551, you should follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. You should also ensure that the device is properly grounded and that any static-sensitive devices are handled in a controlled environment.

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2N5551 Overview

Use the download button to access the 2N5551 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2N555, or try a keyword search, such as Small Signal Bipolar Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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2N5551 Alternates

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Image Part Number Model
Part Image 2N5551TA Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image 2N5551ZL1G onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image 2N5551RLRE onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image 2N5551 International Devices Inc

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Part Image 2N5551 Texas Instruments

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
For a full list of alternate parts for 2N5551, check out Findchips.com