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2N6031 - onsemi

Description: High−Voltage − High Power Transistors BJT PNP 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS, 200 WATTS Bipolar

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2N6031 - onsemi PCB footprint - Other - Other - CASE 1−07 TO−204AA (TO−3) ISSUE Z
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2N6031 - onsemi  - 3D model - Other - CASE 1−07 TO−204AA (TO−3) ISSUE Z
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2N6031 Details

  • Manufacturer Part Number:

    2N6031

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3

  • Package Description:

    CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    CASE 1-07

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    140 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    4

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    1 MHz

2N6031 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N6031 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N6031 requires a minimum of 10V between the gate and source terminals, and a maximum of 20V between the drain and source terminals. Additionally, the gate-source voltage should be limited to ±20V to prevent damage.
  • The maximum allowable power dissipation for the 2N6031 is 125W, assuming a case temperature of 25°C. However, this value can be derated based on the actual operating temperature and other factors.
  • Yes, the 2N6031 can be used in switching applications, but it is not optimized for high-frequency switching. It has a relatively high gate-source capacitance, which can lead to increased switching losses. However, it can be used in low-frequency switching applications, such as in power supplies or motor control circuits.
  • To protect the 2N6031 from ESD, it is recommended to handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-protected package. Additionally, the device should be connected to a ground plane or other ESD protection circuitry to prevent damage.

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Part Image 2N6031 Inchange Semiconductor Company Ltd

Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin

Part Image 2N6031PBFREE Central Semiconductor Corp

Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin

Part Image 2N6031G onsemi

Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin