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2N6042G - onsemi

Description: Obsolete - 12 A, 100 V PNP Darlington Bipolar Power Transistor

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PCB Footprints
2N6042G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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3D Models
2N6042G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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2N6042G Details

  • Manufacturer Part Number:

    2N6042G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N6042G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6042G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, which is 150°C for the 2N6042G.
  • To ensure the 2N6042G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically 0.6-0.8V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the base current should be limited to prevent saturation.
  • For optimal thermal management, it is recommended to use a heat sink with a thermal resistance of less than 10°C/W. The PCB layout should also be designed to minimize thermal resistance and ensure good heat dissipation. A minimum of 1 oz copper thickness and a thermal via array under the device can help to reduce thermal resistance.
  • To protect the 2N6042G from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD suppressors on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.
  • The 2N6042G should be stored in a dry, cool place away from direct sunlight and moisture. The devices should be handled with anti-static wrist straps or mats to prevent ESD damage. It is also recommended to use anti-static packaging materials and to avoid touching the device's pins or leads.

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2N6042G Overview

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Part Image 2N6042 General Transistor Corp

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Part Image 2N6042 onsemi

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6042 STMicroelectronics

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin