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2N6075AG - onsemi

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2N6075AG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUEZ
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2N6075AG - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09 ISSUEZ
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2N6075AG Details

  • Manufacturer Part Number:

    2N6075AG

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-225

  • Package Description:

    LEAD FREE, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • Additional Feature:

    CMOS COMPATIBLE

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • DC Gate Trigger Current-Max:

    20 mA

  • DC Gate Trigger Voltage-Max:

    2.5 V

  • Holding Current-Max:

    30 mA

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Leakage Current-Max:

    2 mA

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    110 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    4 A

  • Repetitive Peak Off-state Voltage:

    600 V

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Trigger Device Type:

    4 QUADRANT LOGIC LEVEL TRIAC

2N6075AG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6075AG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
  • To ensure the 2N6075AG is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, you should ensure the device is operated within the recommended current and voltage ranges.
  • The recommended heatsink design for the 2N6075AG depends on the specific application and operating conditions. However, as a general guideline, a heatsink with a thermal resistance of around 10-20°C/W is recommended. You should also ensure the heatsink is properly mounted and thermally interfaced with the device to ensure efficient heat transfer.
  • While the 2N6075AG is primarily designed for linear applications, it can be used in switching applications with some caution. However, you should be aware that the device's switching characteristics may not be optimized, and the device may not be suitable for high-frequency switching applications. You should carefully evaluate the device's switching performance and ensure it meets your specific application requirements.
  • To handle ESD protection for the 2N6075AG, you should follow standard ESD protection guidelines, such as using ESD-sensitive handling procedures, using anti-static packaging and materials, and incorporating ESD protection devices (such as TVS diodes) in your circuit design. You should also ensure the device is properly grounded and connected to a suitable ESD protection network.

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