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2N6397G - onsemi

Description: 2N6397G

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2N6397G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2N6397G
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2N6397G - onsemi  - 3D model - Transistor Outline, Vertical - 2N6397G
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2N6397G Details

  • Manufacturer Part Number:

    2N6397G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-220AB

  • Package Description:

    LEAD FREE, CASE 221A-07, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A-07

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    onsemi

  • Case Connection:

    ANODE

  • Circuit Commutated Turn-off Time-Nom:

    35 µs

  • Configuration:

    SINGLE

  • DC Gate Trigger Current-Max:

    30 mA

  • DC Gate Trigger Voltage-Max:

    1.5 V

  • Holding Current-Max:

    50 mA

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Leakage Current-Max:

    2 mA

  • Non-Repetitive Pk On-state Cur:

    100 A

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    12 A

  • Repetitive Peak Off-state Voltage:

    400 V

  • Repetitive Peak Reverse Voltage:

    400 V

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Trigger Device Type:

    SCR

2N6397G Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2N6397G is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.
  • To ensure linear operation, the 2N6397G should be biased in the active region, where the base-emitter voltage (VBE) is around 0.7V and the collector-emitter voltage (VCE) is above the saturation voltage (VCEsat). A stable voltage source and proper resistor values are crucial for maintaining a stable bias point.
  • The recommended storage temperature range for the 2N6397G is -55°C to 150°C. However, it's essential to follow proper storage and handling procedures to prevent damage to the device.
  • While the 2N6397G is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching.
  • To prevent electrostatic discharge (ESD) damage, it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider incorporating ESD protection devices, such as TVS diodes, in your circuit design.

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2N6397G Overview

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Part Image 2N6397T onsemi

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Part Image TIC126C Texas Instruments

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Part Image 2N6397 Semitronics Corp

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