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2N6504 - onsemi

Description: Silicon Controlled Rectifier, 50 Volt, 8A, TO-220

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2N6504 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB CASE221A-07
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2N6504 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB CASE221A-07
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2N6504 Details

  • Manufacturer Part Number:

    2N6504

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    CASE 221A-07, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 221A-07

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ANODE

  • Configuration:

    SINGLE

  • DC Gate Trigger Current-Max:

    30 mA

  • DC Gate Trigger Voltage-Max:

    1.5 V

  • Holding Current-Max:

    40 mA

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Leakage Current-Max:

    2 mA

  • Non-Repetitive Pk On-state Cur:

    250 A

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • On-state Current-Max:

    8000 A

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    25 A

  • Repetitive Peak Off-state Voltage:

    50 V

  • Repetitive Peak Reverse Voltage:

    50 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Trigger Device Type:

    SCR

2N6504 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N6504 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N6504 requires a minimum gate-source voltage (Vgs) of 10V and a maximum drain-source voltage (Vds) of 250V. Additionally, the gate current (Ig) should be limited to 100mA to prevent damage.
  • The maximum power dissipation of the 2N6504 is 125W, but this can be increased to 250W with proper heat sinking and thermal management.
  • Yes, the 2N6504 can be used in high-frequency applications up to 1MHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, to ensure proper performance.
  • To protect the 2N6504 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is properly grounded during assembly and testing.

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2N6504 Overview

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Part Image MCR69-2 onsemi

Silicon Controlled Rectifier, 25A I(T)RMS, 25mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB

Part Image 2N6504G onsemi

Silicon Controlled Rectifier, 25A I(T)RMS, 8A I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB

Part Image S0525R Loras Industries Inc

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Part Image S0525R Littelfuse Inc

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For a full list of alternate parts for 2N6504, check out Findchips.com