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2N6507G - onsemi

Description: SCR Thyristor 2N6507G, 400V 16A 30mA, TO-220AB 3-Pin

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PCB Footprints
2N6507G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB CASE221A-07
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2N6507G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB CASE221A-07
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2N6507G Details

  • Manufacturer Part Number:

    2N6507G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-220AB

  • Package Description:

    LEAD FREE, CASE 221A-07, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A-07

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    onsemi

  • Case Connection:

    ANODE

  • Configuration:

    SINGLE

  • DC Gate Trigger Current-Max:

    30 mA

  • DC Gate Trigger Voltage-Max:

    1.5 V

  • Holding Current-Max:

    40 mA

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Leakage Current-Max:

    2 mA

  • Non-Repetitive Pk On-state Cur:

    250 A

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • On-state Current-Max:

    8000 A

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    25 A

  • Repetitive Peak Off-state Voltage:

    400 V

  • Repetitive Peak Reverse Voltage:

    400 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Trigger Device Type:

    SCR

2N6507G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N6507G is -55°C to 150°C.
  • To ensure proper biasing, the 2N6507G requires a minimum of 10V on the gate with respect to the source, and the drain-source voltage should be at least 10V higher than the gate-source voltage.
  • The maximum allowable power dissipation for the 2N6507G is 125W at a case temperature of 25°C.
  • Yes, the 2N6507G can be used in switching applications, but it's essential to ensure that the device is properly driven and the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
  • To protect the 2N6507G from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded.

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2N6507G Overview

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Part Image MCR69-6 Motorola Semiconductor Products

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