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2N7262 - Microsemi Corporation

Description: RADIATION HARDENED N-CHANNEL MOSFET -55 to +150 °C 25 W 0.35Ω 200VDC 5.5ADC

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PCB Footprints
2N7262 - Microsemi Corporation PCB footprint - Other - Other - TO-205AF_2025-1.1
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2N7262 Details

  • Manufacturer Part Number:

    2N7262

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    BCY

  • Package Description:

    MODIFIED TO-39, 3 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-205AF

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

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2N7262 Overview

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2N7262 Alternates

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Image Part Number Model
Part Image IRHF7230PBF Infineon Technologies AG

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

Part Image JANSG2N7262 Infineon Technologies AG

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

Part Image 2N7262 International Rectifier

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Image JANSR2N7262 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Image JANSH2N7262 Infineon Technologies AG

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

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