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2SA1358 - Toshiba

Description: Transistor: PNP; bipolar; 120V; 1A; 10W; TO126

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PCB Footprints
2SA1358 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO126-3
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3D Models
2SA1358 - Toshiba  - 3D model - Transistor Outline, Vertical - TO126-3
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2SA1358 Details

  • Manufacturer Part Number:

    2SA1358

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    LEAD FREE, 2-8H1A, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    10 W

  • Power Dissipation-Max (Abs):

    10 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    120 MHz

  • VCEsat-Max:

    1 V

2SA1358 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SA1358 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • While the 2SA1358 is a general-purpose transistor, it is not recommended for high-frequency switching applications due to its relatively high transition frequency (ft) of 30MHz. For high-frequency applications, a transistor with a higher ft is recommended.
  • To ensure proper heat-sinking, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, apply a thin layer of thermal interface material (TIM) between the transistor and heat sink, and ensure the heat sink is properly mounted to the PCB.
  • The maximum safe operating area (SOA) for the 2SA1358 is not explicitly stated in the datasheet. However, as a general rule, the transistor should not be operated at a voltage greater than 50V and a current greater than 5A simultaneously. Consult the datasheet and application notes for more information.
  • Yes, the 2SA1358 can be used in linear amplifier applications due to its relatively low distortion and high current gain (hFE). However, the transistor's linearity and distortion characteristics should be carefully evaluated to ensure they meet the specific application requirements.

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