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2SA1941 - Toshiba

Description: Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W

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2SA1941 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1A
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2SA1941 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-16C1A
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2SA1941 Details

  • Manufacturer Part Number:

    2SA1941

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    2-16C1A, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    140 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    35

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    100 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

  • VCEsat-Max:

    2 V

2SA1941 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SA1941 is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 125°C for certain parameters.
  • To ensure the 2SA1941 is properly biased for linear operation, you should follow the recommended biasing circuit and component values provided in the datasheet, and also consider the specific application requirements and operating conditions.
  • The maximum safe operating area (SOA) for the 2SA1941 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings, as well as the application's specific requirements and operating conditions.
  • While the 2SA1941 is primarily designed for linear applications, it can be used in switching applications with proper design and consideration of the device's switching characteristics, such as turn-on and turn-off times, and the application's specific requirements.
  • To handle ESD protection for the 2SA1941, you should follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider adding external ESD protection devices or circuits to the application.

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Part Image 2SA1941 Toshiba Electronic Devices & Storage Corporation

PNP Bipolar Transistor / VCEO=-140 V / IC=-10 A / hFE=55~160 / VCE(sat)=-2.0 V / TO-3P(N)