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2SC5415AF-TD-E - onsemi

Description: High gain : Forward Transfer Gain=9dB typ (f=1GHz); High cut-off frequency : fT=6.7GHz typ

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2SC5415AF-TD-E Details

  • Manufacturer Part Number:

    2SC5415AF-TD-E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-89 / PCP-1

  • Package Description:

    SC-62, SOT-89, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    419AU

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    1.8 pF

  • Collector-Emitter Voltage-Max:

    12 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    135

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.8 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    6700 MHz

2SC5415AF-TD-E Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SC5415AF-TD-E is a standard SOT-23 package with a 1.3mm x 1.3mm body size and 0.5mm lead pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and minimizing power dissipation. The datasheet provides thermal resistance and junction-to-ambient temperature ratings to help with thermal design.
  • The maximum safe operating area (SOA) for the 2SC5415AF-TD-E is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure reliable operation.
  • While the 2SC5415AF-TD-E is a general-purpose NPN transistor, it's not optimized for high-frequency switching applications. The device's transition frequency (fT) is around 1.5 GHz, which may not be sufficient for high-frequency switching. For high-frequency applications, it's recommended to use a transistor specifically designed for high-frequency switching, such as the 2N5551 or 2N5401.
  • The 2SC5415AF-TD-E has a human body model (HBM) ESD rating of 2 kV, which means it can withstand electrostatic discharges up to 2 kV. To ensure ESD protection, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the application design.

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2SC5415AF-TD-E Overview

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