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2SC6144SG - onsemi

Description: Adoption of MBIT process; Low collector-to-emitter saturation voltage : VCE(sat)=180mV (typ); High-speed switching : tf=25ns (typ); Large current capacitance : IC=10A

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2SC6144SG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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2SC6144SG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
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2SC6144SG Details

  • Manufacturer Part Number:

    2SC6144SG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220F-3FS

  • Pin Count:

    3

  • Manufacturer Package Code:

    221AM

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    330 MHz

2SC6144SG Frequently Asked Questions (FAQs)

  • The maximum SOA for the 2SC6144SG is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet and application notes. Additionally, consider the device's current gain (hFE) and base-emitter voltage (VBE) when designing the biasing circuit.
  • The 2SC6144SG has a maximum junction temperature (TJ) of 150°C. Ensure proper heat sinking and thermal management to prevent overheating. Follow the recommended thermal resistance (RθJA) and thermal impedance (ZθJA) values provided in the datasheet.
  • Yes, the 2SC6144SG can be used in switching applications. However, consider the device's switching characteristics, such as turn-on and turn-off times, and ensure the circuit is designed to minimize switching losses and electromagnetic interference (EMI).
  • Follow proper ESD handling and storage procedures to prevent damage to the device. Use ESD-protective packaging, wrist straps, and mats when handling the device. Ensure the circuit design includes ESD protection components, such as TVS diodes or resistors, to prevent voltage surges.

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2SC6144SG Overview

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Part Image 2SC6144SG SANYO Semiconductor Co Ltd

Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2SC6144SG SANYO Electric Co Ltd

Power Bipolar Transistor, 10A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin