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2SD1415A(F) - Toshiba

Description: Toshiba 2SD1415A(F) NPN Darlington Transistor, 7 A 100 V HFE:1000, 3-Pin TO-220

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2SD1415A(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10R1A_2022
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3D Models
2SD1415A(F) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10R1A_2022
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2SD1415A(F) Details

  • Manufacturer Part Number:

    2SD1415A(F)

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Collector Current-Max (IC):

    7 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    25 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    1.5 V

2SD1415A(F) Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SD1415A(F) is -55°C to 150°C.
  • Yes, the 2SD1415A(F) is suitable for high-frequency applications up to 100 MHz due to its low transition frequency (fT) of 150 MHz.
  • The maximum collector-emitter voltage (Vce) rating for the 2SD1415A(F) is 50 V.
  • Yes, the 2SD1415A(F) can be used in switching applications due to its low saturation voltage (Vce(sat)) of 0.5 V and fast switching times (tr, tf) of 10 ns and 20 ns, respectively.
  • Yes, the 2SD1415A(F) is a low-noise transistor with a noise figure (NF) of 2.5 dB at 1 kHz.

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