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2SK2480-AZ - Renesas Electronics

Description: The 2SK2480 is a Silicon N Channel MOSFET.

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2SK2480-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ISOLATED TO-220 (MP-45F)
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2SK2480-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - ISOLATED TO-220 (MP-45F)
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2SK2480-AZ Details

  • Manufacturer Part Number:

    2SK2480-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Package Description:

    ISOLATED TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK-A3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    37.1 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK2480-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK2480-AZ is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage source with a low impedance output and a current limiting resistor are required to prevent overvoltage and overcurrent conditions.
  • The maximum allowable power dissipation for the 2SK2480-AZ is dependent on the operating temperature and package type. Refer to the datasheet's thermal characteristics section for specific values. As a general rule, ensure that the device's power dissipation does not exceed the maximum rated value to prevent overheating and damage.
  • Yes, the 2SK2480-AZ is suitable for high-frequency switching applications due to its low gate charge and high switching speed. However, it's crucial to consider the device's parasitic capacitances, gate resistance, and inductance when designing the circuit to minimize ringing and ensure stable operation.
  • To protect the 2SK2480-AZ from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing, and consider adding ESD protection circuits or devices in the final application.

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2SK2480-AZ Overview

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Part Image 2SK2480-AZ NEC Electronics Group

Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

Part Image 2SK2480 NEC Electronics Group

Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220