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2SK2514-A - Renesas Electronics

Description: The 2SK2514 is a Switching N Channel MOSFET.

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PCB Footprints
2SK2514-A - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P (MP-88)-3
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3D Models
2SK2514-A - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-3P (MP-88)-3
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2SK2514-A Details

  • Manufacturer Part Number:

    2SK2514-A

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-88

  • Package Description:

    TO-3P, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004ZS-A3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    500 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e6

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3 W

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2SK2514-A Overview

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Part Image 2SK2514-A NEC Electronics Group

Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET