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2SK3162 - Renesas Electronics

Description: Silicon N Channel MOS FET High Speed Power Switching

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PCB Footprints
2SK3162 - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PRSS0003AD-A_2023
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3D Models
2SK3162 - Renesas Electronics  - 3D model - Transistor Outline, Vertical - PRSS0003AD-A_2023
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2SK3162 Details

  • Manufacturer Part Number:

    2SK3162

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220FM

  • Package Description:

    TO-220FM, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1998-08-01

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    3

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    340 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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2SK3162 Overview

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Part Image 2SK3162 Hitachi Ltd

Power Field-Effect Transistor, 20A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET