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2SK3435-AZ - Renesas Electronics

Description: Support is limited to customers who have already adopted these products.Nch Single Power MOSFET 60V 80A 14mohm MP-25/TO-220AB Automotive

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2SK3435-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (MP-25)
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2SK3435-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-220AB (MP-25)
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2SK3435-AZ Details

  • Manufacturer Part Number:

    2SK3435-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-25

  • Package Description:

    MP-25, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004AH

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    96 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    260 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    84 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3435-AZ Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout for the 2SK3435-AZ in their application note AN18491, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. Renesas recommends using their Gate Resistor Selection Tool or consulting with their technical support team to determine the optimal gate resistor value for your design.
  • The maximum allowed junction temperature for the 2SK3435-AZ is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliable operation and minimize degradation over time.
  • Yes, the 2SK3435-AZ is qualified for automotive and high-reliability applications, meeting the requirements of AEC-Q101 and IATF 16949. However, it's essential to consult with Renesas' technical support team to ensure that the device meets the specific requirements of your application.
  • Renesas recommends following their ESD protection guidelines, which include using ESD-sensitive handling procedures, implementing ESD protection circuits, and using ESD-protected devices in the surrounding circuitry to prevent damage to the 2SK3435-AZ.

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Part Image 2SK3435-AZ NEC Electronics Group

Power Field-Effect Transistor, 80A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB