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2SK3700(F) - Toshiba

Description: Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-3PN

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2SK3700(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SK3700_2021
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3D Models
2SK3700(F) - Toshiba  - 3D model - Transistor Outline, Vertical - 2SK3700_2021
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2SK3700(F) Details

  • Manufacturer Part Number:

    2SK3700(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    351 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    2.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3700(F) Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SK3700(F) is -55°C to 150°C.
  • The recommended storage temperature range for the 2SK3700(F) is -55°C to 150°C.
  • The maximum power dissipation for the 2SK3700(F) is 125W.
  • The thermal resistance from junction to case for the 2SK3700(F) is 1.5°C/W.
  • Yes, the 2SK3700(F) is a fast-switching IGBT with a typical turn-on time of 100ns and a typical turn-off time of 200ns.

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