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6116LA45TDB - Renesas Electronics

Description: The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

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6116LA45TDB - Renesas Electronics PCB footprint - Ceramic Dual-In-Line Packages - Ceramic Dual-In-Line Packages - SD24
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6116LA45TDB Details

  • Manufacturer Part Number:

    6116LA45TDB

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CDIP

  • Package Description:

    DIP-24

  • Pin Count:

    24

  • Manufacturer Package Code:

    SD24

  • ECCN Code:

    3A001.A.2.C

  • HTS Code:

    8542.32.00.41

  • Date Of Intro:

    2020-07-21

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    45 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-CDIP-T24

  • JESD-609 Code:

    e0

  • Length:

    32.51 mm

  • Memory Density:

    16384 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    24

  • Number of Words:

    2048 words

  • Number of Words Code:

    2000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Organization:

    2KX8

  • Output Characteristics:

    3-STATE

  • Output Enable:

    YES

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Code:

    DIP

  • Package Equivalence Code:

    DIP24,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    240

  • Screening Level:

    MIL-STD-883 Class B

  • Seated Height-Max:

    3.54 mm

  • Standby Current-Max:

    0.02 A

  • Standby Voltage-Min:

    2 V

  • Supply Current-Max:

    0.095 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    4.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Width:

    7.62 mm

6116LA45TDB Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 6116LA45TDB is -40°C to 125°C, but it can tolerate storage temperatures from -55°C to 150°C.
  • The 6116LA45TDB has an internal POR and BOR circuitry. To handle these, ensure a stable power supply, use a capacitor on the VCC pin, and consider adding an external reset circuit if necessary.
  • The 6116LA45TDB can operate at a maximum clock frequency of 45 MHz, but it's recommended to check the specific clock frequency requirements for your application.
  • The 6116LA45TDB's flash memory can be configured using the Renesas Flash Development Toolkit or other third-party tools. Consult the datasheet and application notes for specific configuration details.
  • The 6116LA45TDB has a typical active current consumption of 10 mA at 45 MHz, and a standby current consumption of 10 μA. However, actual power consumption may vary depending on the application and operating conditions.

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6116LA45TDB Overview

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