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6116LA90DB - Renesas Electronics

Description: The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

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6116LA90DB - Renesas Electronics PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - PDIP-24
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6116LA90DB - Renesas Electronics  - 3D model - Dual-In-Line Packages - PDIP-24
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6116LA90DB Details

  • Manufacturer Part Number:

    6116LA90DB

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CDIP

  • Package Description:

    DIP-24

  • Pin Count:

    24

  • Manufacturer Package Code:

    CD24

  • ECCN Code:

    3A001.A.2.C

  • HTS Code:

    8542.32.00.41

  • Date Of Intro:

    2020-07-21

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    90 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-CDIP-T24

  • JESD-609 Code:

    e0

  • Length:

    32 mm

  • Memory Density:

    16384 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    24

  • Number of Words:

    2048 words

  • Number of Words Code:

    2000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Organization:

    2KX8

  • Output Characteristics:

    3-STATE

  • Output Enable:

    YES

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Code:

    DIP

  • Package Equivalence Code:

    DIP24,.6

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    240

  • Screening Level:

    MIL-STD-883 Class B

  • Seated Height-Max:

    2.9 mm

  • Standby Current-Max:

    0.025 A

  • Standby Voltage-Min:

    2 V

  • Supply Current-Max:

    0.085 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    4.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Width:

    15.24 mm

6116LA90DB Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 6116LA90DB is -40°C to 125°C, although it can tolerate storage temperatures from -55°C to 150°C.
  • The 6116LA90DB has an internal POR and BOR circuitry. The POR is triggered when the power supply voltage (VCC) rises above 1.5V, and the BOR is triggered when VCC falls below 1.4V. You can use external resistors and capacitors to adjust the POR and BOR thresholds if needed.
  • The 6116LA90DB can operate at a maximum clock frequency of 90 MHz, although the recommended frequency is 80 MHz for optimal performance and power consumption.
  • The 6116LA90DB has 128 KB of flash memory, which can be configured using the Renesas Flash Development Toolkit (FDT) or third-party programming tools. You can also use the on-chip debug (OCD) interface for flash programming and debugging.
  • The 6116LA90DB has a typical active power consumption of 35 mA at 80 MHz and 3.3V, and a standby power consumption of 1.5 mA at 3.3V. The power consumption can be further reduced by using the low-power modes and clock gating.

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