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71V3577S80BQ - Renesas Electronics

Description: The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

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71V3577S80BQ - Renesas Electronics PCB footprint - BGA - BGA - 165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
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71V3577S80BQ - Renesas Electronics  - 3D model - BGA - 165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
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71V3577S80BQ Details

  • Manufacturer Part Number:

    71V3577S80BQ

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CABGA

  • Pin Count:

    165

  • Manufacturer Package Code:

    BQ165

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    8 ns

  • Additional Feature:

    FLOW THROUGH ARCHITECTURE

  • Clock Frequency-Max (fCLK):

    100 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B165

  • JESD-609 Code:

    e0

  • Length:

    15 mm

  • Memory Density:

    4718592 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    165

  • Number of Words:

    131072 words

  • Number of Words Code:

    128000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    128KX36

  • Output Characteristics:

    3-STATE

  • Output Enable:

    YES

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TBGA

  • Package Equivalence Code:

    BGA165,11X15,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    225

  • Qualification Status:

    Not Qualified

  • Reverse Pinout:

    NO

  • Seated Height-Max:

    1.2 mm

  • Standby Current-Max:

    0.03 A

  • Standby Voltage-Min:

    3.14 V

  • Supply Current-Max:

    0.2 mA

  • Supply Voltage-Max (Vsup):

    3.465 V

  • Supply Voltage-Min (Vsup):

    3.135 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    13 mm

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Manufacturer Collaborated
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71V3577S80BQ Overview

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Part Image IDT71V3577S80BQ Integrated Device Technology Inc

Cache SRAM, 128KX36, 8ns, CMOS, PBGA165

Part Image IDT71V3577S80BQ8 Integrated Device Technology Inc

Cache SRAM, 128KX36, 8ns, CMOS, PBGA165

Part Image IDT71V2577S80BQ Integrated Device Technology Inc

Cache SRAM, 128KX36, 8ns, CMOS, PBGA165

Part Image IDT71V3577S80BQ8 Renesas Electronics Corporation

Cache SRAM, 128KX36, 8ns, CMOS, PBGA165

Part Image 71V2577S80BQ Integrated Device Technology Inc

Standard SRAM, 128KX36, 8ns, CMOS, PBGA165

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