AG048FLS4FRA - ROHM Semiconductor
Description: MOSFET with Continous Drain Current -36 to 36 A, Drain Source Resistance 19.4 to 41 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 1 to 2.5 V.
Description: MOSFET with Continous Drain Current -36 to 36 A, Drain Source Resistance 19.4 to 41 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 1 to 2.5 V.
AG048FLS4FRA
Active
EAR99
ROHM Semiconductor