AG502EGD3HRBTL - ROHM Semiconductor

AG502EGD3HRBTL Details

• Manufacturer Part Number:

  AG502EGD3HRBTL

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• Package Description:

  DPAK-3/2

• ECCN Code:

  EAR99

• Manufacturer:

  ROHM Semiconductor

• YTEOL:

  3

• Avalanche Energy Rating (Eas):

  46.7 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  68 A

• Drain-source On Resistance-Max:

  0.0131 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  220 pF

• JEDEC-95 Code:

  TO-252

• JESD-30 Code:

  R-PSSO-G2

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Packing Method:

  TR, EMBOSSED, 13 INCH

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  P-CHANNEL

• Power Dissipation-Max (Abs):

  77 W

• Pulsed Drain Current-Max (IDM):

  136 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Element Material:

  SILICON