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AP2C018LM - ADVANCED POWER ELECTRONICS CORP

Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2C018LM - ADVANCED POWER ELECTRONICS CORP PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_1
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AP2C018LM - ADVANCED POWER ELECTRONICS CORP  - 3D model - Small Outline Packages - SO-8_1
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AP2C018LM Details

  • Manufacturer Part Number:

    AP2C018LM

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Advanced Power Electronics Corp

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8.3 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    265 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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