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APT30DQ60BHBG - Microsemi Corporation

Description: Diodes - General Purpose, Power, Switching Fast Recovery Epitaxial Diode - DQ

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PCB Footprints
APT30DQ60BHBG - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
APT30DQ60BHBG - Microsemi Corporation  - 3D model - Transistor Outline, Vertical - TO-247
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APT30DQ60BHBG Details

  • Manufacturer Part Number:

    APT30DQ60BHBG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-247AD

  • Package Description:

    ROHS COMPLIANT, TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE

  • Application:

    ULTRA FAST SOFT RECOVERY

  • Case Connection:

    ANODE AND CATHODE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.4 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Non-rep Pk Forward Current-Max:

    320 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    30 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Recovery Time-Max:

    0.03 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

APT30DQ60BHBG Frequently Asked Questions (FAQs)

  • Microsemi recommends a 2-layer PCB with a thermal pad connected to a large copper area on the bottom layer for heat dissipation. A minimum of 1 oz copper thickness is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of 1 W/m-K or higher is suggested.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal management system to keep the junction temperature below 150°C. It's also crucial to ensure good airflow and avoid thermal hotspots.
  • The APT30DQ60BHBG has an ESD rating of Human Body Model (HBM) 2 kV and Machine Model (MM) 200 V. To prevent ESD damage, handle the device with an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or exposed die.
  • Yes, the APT30DQ60BHBG can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent current imbalance and oscillations.
  • Microsemi recommends a gate drive voltage of 15 V ± 1 V and a gate current of 2 A to 5 A. The gate drive voltage should be adjusted based on the specific application requirements and the device's threshold voltage.

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Part Image APT30DQ60BHBG Microchip Technology Inc

Rectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247AD

Part Image APT30DQ60BHB Microsemi Corporation (now Microchip)

Rectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247AD