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ARF461BG - Microsemi Corporation

Description: • Specifi ed 250 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Effi ciency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coeffi cient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • RoHS Compliant

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ARF461BG - Microsemi Corporation - PCB symbol
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PCB Footprints
ARF461BG - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247a
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3D Models
ARF461BG - Microsemi Corporation - 3D model - Transistor Outline, Vertical - TO-247a
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ARF461BG Details

  • Manufacturer Part Number:

    ARF461BG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-247AD

  • Package Description:

    ROHS COMPLIANT, TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    6.5 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

ARF461BG Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces as short as possible and away from the digital signal traces. Use a 50-ohm microstrip or coplanar waveguide for the RF output.
  • The ARF461BG requires a single 5V power supply. Ensure the power supply is clean and well-regulated. A 10uF decoupling capacitor should be placed close to the device, and a 1uF capacitor should be used for each VCC pin. The biasing circuit should be designed to provide a stable 5V supply with minimal noise and ripple.
  • The ARF461BG is rated for operation from -40°C to +85°C. However, the device's performance may degrade at higher temperatures. It's recommended to operate the device within the -20°C to +70°C range for optimal performance and reliability.
  • Use a spectrum analyzer to measure the RF output power and frequency. Check the device's biasing and power supply for any issues. Verify the PCB layout and ensure the RF signal traces are properly routed. If the issue persists, consult the device's application notes and contact Microsemi's technical support for further assistance.
  • The ARF461BG is not specifically designed for radiation-hardened applications. However, Microsemi offers radiation-hardened versions of the device, such as the QRF461BG, which is designed for space and high-reliability applications. Consult Microsemi's documentation and technical support for more information.

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ARF461BG Overview

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ARF461BG Alternates

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Image Part Number Model
Part Image ARF461B Microchip Technology Inc

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD
Part Image ARF461B Microsemi Corporation (now Microchip)

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD