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ARF463AG - Microsemi Corporation

Description: RF MOSFET Transistors RF MOSFET (VDMOS)

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PCB Footprints
ARF463AG - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3L
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ARF463AG - Microsemi Corporation  - 3D model - Transistor Outline, Vertical - TO-247-3L
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ARF463AG Details

  • Manufacturer Part Number:

    ARF463AG

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    9 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    13 dB

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    28 ns

  • Turn-on Time-Max (ton):

    18 ns

ARF463AG Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces short and away from digital signals. Use a common mode filter or a pi-filter to reduce EMI.
  • Use a voltage regulator to maintain a stable 3.3V supply. Ensure the bias voltage (VBIAS) is set to 1.5V ± 0.1V. Use a 1kΩ resistor to connect VBIAS to VCC.
  • The recommended input power level is -20 dBm to 0 dBm. Exceeding this range may cause compression or damage to the device.
  • Use a high-quality, low-noise voltage regulator. Ensure the PCB layout is optimized for minimal noise coupling. Use a common mode filter or a pi-filter to reduce EMI.
  • The maximum operating temperature is 85°C. Exceeding this temperature may affect the device's performance and reliability.

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Part Image ARF463A Microsemi Corporation (now Microchip)

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247