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ARF466BG - Microsemi Corporation

Description: RF MOSFET Transistors RF MOSFET (VDMOS)

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ARF466BG - Microsemi Corporation PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 (L) Package_
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3D Models
ARF466BG - Microsemi Corporation  - 3D model - Transistor Outline, Vertical - TO-264 (L) Package_
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ARF466BG Details

  • Manufacturer Part Number:

    ARF466BG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    13 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Surface Mount:

    NO

ARF466BG Frequently Asked Questions (FAQs)

  • A good PCB layout for the ARF466BG involves keeping the input and output traces short and separate, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
  • To ensure proper biasing, make sure to follow the recommended voltage and current settings outlined in the datasheet. The ARF466BG requires a single 3.3V or 5V power supply, and the input voltage should be filtered to reduce noise. Additionally, ensure that the bias resistors are correctly sized and placed.
  • The ARF466BG is rated for operation from -40°C to +85°C. However, it's essential to note that the device's performance may degrade at higher temperatures, and thermal management should be considered in the system design.
  • The ARF466BG is not specifically designed or tested for radiation hardness. If radiation hardness is a requirement, it's recommended to consult with Microsemi Corporation or consider using a radiation-hardened version of the device, such as the QRF467BG.
  • To troubleshoot issues with the ARF466BG, start by verifying the PCB layout and ensuring that the device is properly biased. Check for noise and oscillations on the input and output signals, and verify that the device is operating within its recommended specifications. Consult the datasheet and application notes for guidance on troubleshooting common issues.

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ARF466BG Overview

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Part Image ARF466B Microchip Technology Inc

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-264AA