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AT25DF041B-MHN-T - Renesas Electronics

Description: The AT25DF041B is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.

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AT25DF041B-MHN-T - Renesas Electronics PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MA1 – UDFN
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AT25DF041B-MHN-T - Renesas Electronics  - 3D model - Small Outline No-lead - 8MA1 – UDFN
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AT25DF041B-MHN-T Details

  • Manufacturer Part Number:

    AT25DF041B-MHN-T

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Package Description:

    UDFN-8

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    8

  • Clock Frequency-Max (fCLK):

    104 MHz

  • Data Retention Time-Min:

    20

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    6 mm

  • Memory Density:

    524288 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    524288 words

  • Number of Words Code:

    512000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512KX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    0.6 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    1.65 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    5 mm

AT25DF041B-MHN-T Frequently Asked Questions (FAQs)

  • The AT25DF041B-MHN-T has a maximum of 100,000 erase cycles per sector, and 10,000 erase cycles per device.
  • To handle page write buffer underrun errors, ensure that the page write buffer is fully loaded with data before initiating the write operation. Also, use the status register to check for errors and retry the write operation if necessary.
  • The recommended power-up sequence is to apply VCC first, followed by the clock signal (SCK), and then the chip select signal (CS). This ensures proper device initialization and prevents unwanted writes or erases.
  • The device density and organization can be determined by reading the device ID and revision ID registers. The AT25DF041B-MHN-T has a density of 4Mb (512K x 8) and is organized as 512 pages of 1024 bytes each.
  • The Write Enable Latch (WEL) bit is used to enable or disable write operations to the device. When WEL is set to 1, write operations are enabled, and when WEL is set to 0, write operations are disabled.

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