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AT25DF041B-UUN-T - Renesas Electronics

Description: FLASH Memory IC 4Mbit SPI 104 MHz 8-WLCSP (1.63x1.58)

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AT25DF041B-UUN-T - Renesas Electronics PCB footprint - Other - Other - 8-WLCSP
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AT25DF041B-UUN-T - Renesas Electronics  - 3D model - Other - 8-WLCSP
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AT25DF041B-UUN-T Details

  • Manufacturer Part Number:

    AT25DF041B-UUN-T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    WLCSP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Clock Frequency-Max (fCLK):

    104 MHz

  • Data Retention Time-Min:

    20

  • JESD-30 Code:

    R-PBGA-B8

  • JESD-609 Code:

    e4

  • Length:

    1.631 mm

  • Memory Density:

    524288 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    524288 words

  • Number of Words Code:

    512000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512KX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA8,3X5,14/8

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    0.35 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    1.65 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.4 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NOR TYPE

  • Width:

    1.575 mm

AT25DF041B-UUN-T Frequently Asked Questions (FAQs)

  • The AT25DF041B-UUN-T has a maximum of 100,000 erase cycles per sector, and 10,000 erase cycles per block.
  • To handle page write buffer underrun errors, ensure that the page write buffer is fully loaded with data before initiating the write operation. Also, verify that the write enable latch is set before initiating the write operation.
  • The recommended power-up sequence is to apply VCC first, followed by VSS, and then the clock signal. This ensures that the device powers up correctly and minimizes the risk of latch-up or other power-up related issues.
  • The device density and organization can be determined by reading the device ID and revision ID registers. The device ID register (0x01) contains information about the device density, and the revision ID register (0x02) contains information about the device organization.
  • The Write Enable Latch (WEL) bit is used to enable or disable write operations to the device. When the WEL bit is set, write operations are enabled, and when it is cleared, write operations are disabled.

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