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AT45DB041E-MHN-Y - Renesas Electronics

Description: The AT45DB041E DataFlash is a member of our system enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

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AT45DB041E-MHN-Y - Renesas Electronics PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MA1 – 5 x 6 UDFN...
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AT45DB041E-MHN-Y Details

  • Manufacturer Part Number:

    AT45DB041E-MHN-Y

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Additional Feature:

    ALSO OPERATES MIN 1.65 V AT 70 MHZ

  • Clock Frequency-Max (fCLK):

    85 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    6 mm

  • Memory Density:

    4194304 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    1

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    4194304 words

  • Number of Words Code:

    4000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    4MX1

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    2.7 V

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    0.6 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.000001 A

  • Supply Current-Max:

    0.015 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.3 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    5 mm

  • Write Protection:

    HARDWARE/SOFTWARE

AT45DB041E-MHN-Y Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB041E-MHN-Y is 2.7V to 3.6V.
  • When the device is in a power-down state, all internal operations, including page write operations, are suspended. To resume page write operations, the device must be brought out of power-down mode by asserting the CE# pin low.
  • The AT45DB041E-MHN-Y supports up to 10,000 erase cycles per sector.
  • The status of a write or erase operation can be determined by polling the RY/BY# pin, which goes low when the operation is in progress and high when it is complete.
  • The WP# pin is a write protect pin that allows the user to protect the entire memory array or individual sectors from write or erase operations. To use it, tie the WP# pin low to enable write protection or high to disable it.

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