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AT45DB081E-UUN-T - Renesas Electronics

Description: The AT45DB081E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

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AT45DB081E-UUN-T - Renesas Electronics PCB footprint - Other - Other - AT45DB081E-UUN-T-5
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AT45DB081E-UUN-T - Renesas Electronics  - 3D model - Other - AT45DB081E-UUN-T-5
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AT45DB081E-UUN-T Details

  • Manufacturer Part Number:

    AT45DB081E-UUN-T

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WLCSP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Additional Feature:

    IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B8

  • JESD-609 Code:

    e3

  • Length:

    2.317 mm

  • Memory Density:

    8388608 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    1048576 words

  • Number of Words Code:

    1000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    1MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA8,2X4(UNSPEC)

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3 V

  • Seated Height-Max:

    0.52 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00004 A

  • Supply Current-Max:

    0.016 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.3 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NOR TYPE

  • Width:

    1.605 mm

  • Write Protection:

    HARDWARE/SOFTWARE

AT45DB081E-UUN-T Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB081E-UUN-T is 2.7V to 3.6V.
  • When the device is in low power mode, page write operations are not allowed. The device must be in active mode to perform page writes. It is recommended to exit low power mode before performing any write operations.
  • The maximum number of erase cycles for the AT45DB081E-UUN-T is 10,000 cycles per sector.
  • The device status can be determined by reading the status register (SR) or the Ready/Busy (RDY/BUSY) pin. The SR provides information on the device's busy status, while the RDY/BUSY pin is an open-drain output that indicates when the device is busy or ready.
  • The Sector Protection (SP) feature allows the user to protect specific sectors from accidental erase or write operations. This feature is useful for storing critical data that should not be modified.

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