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AUIRFS8409-7P - Infineon

Description: MOSFET N-Ch 40V 522A Automotive D2PAK-6 International Rectifier AUIRFS8409-7P N-channel MOSFET Transistor, 240 A, 522 A, 40 V, 7-Pin D2PAK

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AUIRFS8409-7P - Infineon - PCB symbol
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PCB Footprints
AUIRFS8409-7P - Infineon PCB footprint - Other - Other - D2Pak-7Pin_FFW
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AUIRFS8409-7P Details

  • Manufacturer Part Number:

    AUIRFS8409-7P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    240 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Surface Mount:

    YES

AUIRFS8409-7P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AUIRFS8409-7P is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and optimizing the PCB design for heat dissipation.
  • The recommended gate drive voltage for the AUIRFS8409-7P is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the AUIRFS8409-7P from overvoltage and undervoltage conditions, use a voltage regulator or a voltage supervisor to ensure the input voltage remains within the recommended operating range.
  • The maximum allowable current for the AUIRFS8409-7P is 840A, with a maximum pulsed current of 1680A.

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AUIRFS8409-7P Overview

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AUIRFS8409-7P Alternates

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Part Image AUIRFS8409-7TRL Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET