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AUIRLU024Z - Infineon

Description: N-Channel 55 V 16A (Tc) 35W (Tc) Through Hole IPAK

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AUIRLU024Z - Infineon PCB footprint - Other - Other - AUIRLU024Z-1
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AUIRLU024Z - Infineon  - 3D model - Other - AUIRLU024Z-1
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AUIRLU024Z Details

  • Manufacturer Part Number:

    AUIRLU024Z

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRLU024Z Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin (pin 3) to dissipate heat efficiently. A thermal via or a thermal pad can also be used to improve heat dissipation.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be within the recommended range (typically 10-15V) and the drain-source voltage (Vds) should be within the absolute maximum rating (30V). Additionally, the device should be operated within the recommended temperature range (-40°C to 150°C).
  • The maximum allowed current ripple for the AUIRLU024Z is not explicitly stated in the datasheet. However, as a general guideline, Infineon recommends keeping the current ripple below 10% of the maximum current rating (24A) to ensure reliable operation and minimize electromagnetic interference (EMI).
  • Yes, the AUIRLU024Z is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

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AUIRLU024Z Overview

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Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA