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BAS19LT1G - onsemi

Description: Pb-Free Package is Available.; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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PCB Footprints
BAS19LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - BAS19LT1G
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3D Models
BAS19LT1G - onsemi  - 3D model - SOT23 (3-Pin) - BAS19LT1G
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BAS19LT1G Details

  • Manufacturer Part Number:

    BAS19LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    onsemi

  • YTEOL:

    6.1

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2.5 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.225 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    120 V

  • Reverse Recovery Time-Max:

    0.05 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAS19LT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the BAS19LT1G is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper derating guidelines, use a suitable thermal management system, and consider the device's power dissipation and thermal resistance.
  • The maximum allowable power dissipation for the BAS19LT1G is 500 mW. Exceeding this limit can lead to device failure.
  • To prevent ESD damage, use proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags, and follow the manufacturer's ESD protection guidelines.
  • Yes, the BAS19LT1G is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing high-frequency circuits.

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BAS19LT1G Overview

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Part Image BAS19/E9 Vishay Intertechnologies

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Part Image BAS19TA Zetex / Diodes Inc

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Part Image BAS19-T NXP Semiconductors

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For a full list of alternate parts for BAS19LT1G, check out Findchips.com