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BAS29 - onsemi

Description: General Purpose High Voltage Diode

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BAS29 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - sot-23-
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BAS29 - onsemi  - 3D model - SOT23 (3-Pin) - sot-23-
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BAS29 Details

  • Manufacturer Part Number:

    BAS29

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    53 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.1

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    120 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.75 V

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.35 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    120 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Recovery Time-Max:

    0.05 µs

  • Reverse Test Voltage:

    90 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAS29 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for BAS29 is -55°C to 150°C.
  • BAS29 is a unidirectional TVS diode, meaning it only protects against overvoltage in one direction.
  • The typical response time of BAS29 to an overvoltage event is less than 1 nanosecond.
  • Yes, BAS29 is AEC-Q101 qualified, making it suitable for use in automotive applications.
  • The maximum power dissipation of BAS29 is 1500 W for a 10/1000 μs pulse.

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BAS29 Overview

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Part Image 933723180215 Nexperia

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Part Image BAS29235 NXP Semiconductors

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.25A, 110V V(RRM), Silicon

Part Image BAS29-T NXP Semiconductors

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.25A, 110V V(RRM), Silicon, TO-236AB

Part Image BAS29T/R Nexperia

Rectifier Diode

Part Image BAS29-T Nexperia

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.25A, 110V V(RRM), Silicon, TO-236AB

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