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BAV99WE6327 - Infineon

Description: Diode Array 1 Pair Series Connection Standard 80 V 200mA (DC) Surface Mount SC-70, SOT-323

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BAV99WE6327 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-323
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BAV99WE6327 - Infineon  - 3D model - SOT23 (3-Pin) - SOT-323
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BAV99WE6327 Details

  • Manufacturer Part Number:

    BAV99WE6327

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-70

  • Package Description:

    SOT-323, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT323

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    85 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    4.5 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.33 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    85 V

  • Reverse Current-Max:

    0.15 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    70 V

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

BAV99WE6327 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN191 (Power MOSFETs - Thermal Management) and AN201 (Power MOSFETs - PCB Layout). Following these guidelines can help minimize thermal resistance, reduce parasitic inductance, and ensure optimal performance.
  • The gate resistor value depends on the specific application, driver circuit, and switching frequency. A general guideline is to choose a value between 10 Ω to 100 Ω. However, it's recommended to consult Infineon's application notes and simulation tools, such as the Gate Resistor Calculator, to determine the optimal value for your specific use case.
  • Although the datasheet specifies a maximum VGS of ±20 V, it's recommended to limit the voltage to ±15 V during switching to prevent damage to the device. This is because the device may experience voltage overshoots or ringing during high-frequency switching.
  • To ensure SOA compliance, you should consider the device's voltage, current, and temperature ratings. Use Infineon's SOA simulation tools or consult their application notes to determine the safe operating area for your specific application. Additionally, consider implementing overcurrent and overvoltage protection to prevent device damage.
  • The recommended storage temperature range for the BAV99WE6327 is -40°C to 150°C. Storing the device within this range can help prevent damage and ensure long-term reliability.

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BAV99WE6327 Overview

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