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BAW75-TAP - Vishay

Description: Diodes - General Purpose, Power, Switching 35 Volt 300mA 2ns

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PCB Footprints
BAW75-TAP - Vishay PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - BAW75-TAP
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3D Models
BAW75-TAP - Vishay  - 3D model - Diodes, Axial Diameter Horizontal Mounting - BAW75-TAP
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BAW75-TAP Details

  • Manufacturer Part Number:

    BAW75-TAP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DO-35, 2 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Application:

    FAST RECOVERY

  • Breakdown Voltage-Min:

    35 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JEDEC-95 Code:

    DO-204AH

  • JESD-30 Code:

    O-XALF-W2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    0.15 A

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.5 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    35 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    25 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver (Sn96.5Ag3.5)

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAW75-TAP Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal performance of BAW75-TAP involves keeping the leads as short as possible, using a ground plane under the device, and minimizing the distance between the device and the antenna. A 4-layer PCB with a dedicated ground plane is recommended.
  • The BAW75-TAP has built-in ESD protection, but it is still recommended to add external ESD protection circuitry to ensure the device is protected from electrostatic discharge. A TVS diode or an ESD protection array can be used for this purpose.
  • The maximum operating temperature range for BAW75-TAP is -40°C to +125°C. However, the device's performance may degrade at higher temperatures, and it is recommended to operate it within a temperature range of -20°C to +85°C for optimal performance.
  • Yes, the BAW75-TAP is designed for high-frequency applications up to 1 GHz. However, the device's performance may degrade at higher frequencies, and it is recommended to evaluate the device's performance in the specific application before using it in production.
  • The BAW75-TAP has built-in overvoltage protection, but it is still recommended to add external overvoltage protection circuitry to ensure the device is protected from power surges and overvoltage conditions. A voltage regulator or a surge protection device can be used for this purpose.

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BAW75-TAP Overview

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