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BD135G - onsemi

Description: BD135, BD137, BD139 are complementary with BD136, BD138, BD140; Minimum Gain - hFE = 40 @ IC = 150 mA; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
BD135G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
BD135G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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BD135G Details

  • Manufacturer Part Number:

    BD135G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD135G Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD135G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure linear operation, the BD135G should be biased in the active region, where the base-emitter voltage (VBE) is around 0.7V and the collector-emitter voltage (VCE) is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the recommended range.
  • For optimal thermal performance, the BD135G should be mounted on a PCB with a solid copper ground plane and a thermal relief pattern. The device should be placed near a heat sink or a thermal pad, and the PCB should be designed to minimize thermal resistance. A thermal interface material (TIM) can be used to improve heat transfer between the device and the heat sink.
  • While the BD135G is primarily designed for linear amplification, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, and it may not be suitable for high-frequency switching applications. However, it can be used in low-frequency switching applications, such as in power supplies or motor control circuits, with proper design considerations.
  • The BD135G is sensitive to ESD, and proper precautions should be taken to prevent damage. This includes using ESD-safe handling and storage procedures, using ESD-protective packaging, and incorporating ESD protection circuits in the design. The device should also be handled in a static-controlled environment, and personnel should wear ESD-protective wrist straps or mats.

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BD135G Overview

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