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BD138G - onsemi

Description: BD136, BD138, BD140 are complementary with BD135, BD137, BD139; Minimum DC Current Gain - hFE = 40 @ IC = 0.15 A; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
BD138G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−126−3LD-2020
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3D Models
BD138G - onsemi  - 3D model - Transistor Outline, Vertical - TO−126−3LD-2020
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BD138G Details

  • Manufacturer Part Number:

    BD138G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD138G Frequently Asked Questions (FAQs)

  • The BD138G can operate safely between -40°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • To ensure proper biasing, the BD138G requires a minimum of 2.5V on the gate-source voltage (Vgs) and a maximum of 20V on the drain-source voltage (Vds). Additionally, the gate current (Ig) should be limited to 100mA or less.
  • The BD138G has a maximum continuous drain current (Id) rating of 3A, and a maximum pulsed drain current rating of 6A.
  • To protect the BD138G from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-safe. Additionally, use ESD-protected packaging and storage materials.
  • Yes, the BD138G is suitable for high-frequency switching applications up to 1MHz, but the device's performance may degrade at higher frequencies. Ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

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BD138G Overview

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BD138G Alternates

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Part Image BD138 STMicroelectronics

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD138-BP Micro Commercial Components

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD138 NXP Semiconductors

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD138 Crimson Semiconductor Inc

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD1386STU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BD138G, check out Findchips.com