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BD237 - STMicroelectronics

Description: BD237, NPN Bipolar Transistor, 2 A 80 V HFE:25 3 MHz Power, 3-Pin SOT-32

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PCB Footprints
BD237 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SOT-32 (TO-126)
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3D Models
BD237 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - SOT-32 (TO-126)
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BD237 Details

  • Manufacturer Part Number:

    BD237

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SIP

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    India

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    25 W

  • Power Dissipation-Max (Abs):

    25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

  • VCEsat-Max:

    0.6 V

BD237 Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD237 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the BD237 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is around 0.7V, and the collector-emitter voltage (VCE) is at least 1V. Additionally, the base current should be limited to prevent saturation, and the collector current should be within the recommended range.
  • The recommended heatsink for the BD237 depends on the specific application and power dissipation requirements. However, as a general rule, a heatsink with a thermal resistance of around 10-20°C/W is recommended. You can use a standard TO-220 heatsink or a custom-designed heatsink depending on your specific requirements.
  • Yes, the BD237 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). The BD237 is primarily designed for linear amplifier applications, and using it as a switch may result in reduced performance and reliability.
  • To protect the BD237 from ESD, you should handle the device by the body, avoid touching the pins, and use an anti-static wrist strap or mat. Additionally, you can use ESD protection devices such as TVS diodes or ESD protection arrays in your circuit design.

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BD237 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image BD237STU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD237 Crimson Semiconductor Inc

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD237 Baneasa SA

Power Bipolar Transistor, 2A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD237 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD237 Samsung Semiconductor

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BD237, check out Findchips.com