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BD238STU - onsemi

Description: Bipolar (BJT) Transistor PNP 80 V 2 A 3MHz 25 W Through Hole TO-126-3

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Symbol
BD238STU - onsemi - PCB symbol
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PCB Footprints
BD238STU - onsemi PCB footprint - Other - Other - TO-126_2024-1
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3D Models
BD238STU - onsemi - 3D model - Other - TO-126_2024-1
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BD238STU Details

  • Manufacturer Part Number:

    BD238STU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-126-3

  • Manufacturer Package Code:

    340AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

BD238STU Frequently Asked Questions (FAQs)

  • The BD238STU can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the base to the emitter through a resistor (Rb) and the collector to the emitter through another resistor (Rc). The recommended values for Rb and Rc can be found in the application notes.
  • The BD238STU has a maximum collector current rating of 1.5 A, making it suitable for low-to-medium power applications.
  • Yes, the BD238STU can be used in switching applications due to its fast switching times (tf ≈ 10 ns, tr ≈ 20 ns) and low saturation voltage (Vce(sat) ≈ 0.5 V). However, ensure proper design and layout to minimize switching losses.
  • To protect the BD238STU from ESD, use proper handling and storage procedures, and consider adding ESD protection devices (e.g., TVS diodes) in the circuit design.

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BD238STU Overview

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BD238STU Alternates

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Image Part Number Model
Part Image BD238 Continental Device India Ltd

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD238S Fairchild Semiconductor Corporation

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD238 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD238 onsemi

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD238 Crimson Semiconductor Inc

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
For a full list of alternate parts for BD238STU, check out Findchips.com