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BD239C - onsemi

Description: Complement to BD240/A/B/C respectively; Medium Power Linear and Switching Applications.

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PCB Footprints
BD239C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to 220
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BD239C - onsemi  - 3D model - Transistor Outline, Vertical - to 220
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BD239C Details

  • Manufacturer Part Number:

    BD239C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    30 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BD239C Frequently Asked Questions (FAQs)

  • The SOA for the BD239C is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 1.5 A and 30 V.
  • To ensure linear operation, the BD239C should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6 V and 0.8 V, and a collector-emitter voltage (Vce) greater than 1 V. The base current should be limited to prevent saturation.
  • For optimal thermal performance, the BD239C should be mounted on a PCB with a large copper area for heat dissipation. A thermal via or thermal pad can be used to improve heat transfer. The device should be placed near a heat sink or a metal plate for efficient cooling.
  • Yes, the BD239C can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the transition frequency, rise and fall times, and the maximum collector current. The device's switching performance may be limited by its internal capacitances and parasitic resistances.
  • To protect the BD239C from ESD, it's recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in parallel with the transistor. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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BD239C Overview

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BD239C Alternates

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Part Image BD239C STMicroelectronics

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD239C Continental Device India Ltd

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD239C Rectron Semiconductor

Power Bipolar Transistor, 2A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD239CJ69Z Fairchild Semiconductor Corporation

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD239C Bourns Inc

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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