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BD243B - onsemi

Description: Trans GP BJT NPN 80V 6A 65000mW 3-Pin(3+Tab) TO-220 Bag

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PCB Footprints
BD243B - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A−0
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3D Models
BD243B - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A−0
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BD243B Details

  • Manufacturer Part Number:

    BD243B

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

BD243B Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD243B is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the specified thermal boundaries to ensure reliable operation.
  • To ensure the BD243B is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, it's crucial to ensure the device is operated within its recommended operating conditions, including the maximum collector current and power dissipation.
  • For optimal performance and reliability, it's recommended to follow good PCB design practices, such as keeping the device away from heat sources, using a solid copper pour for heat dissipation, and ensuring adequate clearance around the device. Additionally, consider using thermal vias or a heat sink to improve heat dissipation, especially in high-power applications.
  • Yes, the BD243B can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the transition frequency, rise and fall times, and the maximum switching frequency. Additionally, ensure the device is operated within its recommended switching conditions, and consider using a snubber circuit to reduce electromagnetic interference (EMI) and voltage spikes.
  • To protect the BD243B from ESD, it's recommended to follow standard ESD protection practices, such as using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design.

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BD243B Overview

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BD243B Alternates

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Part Image BD243B Continental Device India Ltd

Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD243B Fairchild Semiconductor Corporation

Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD243BTU onsemi

Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD243B Crimson Semiconductor Inc

Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD243B Baneasa SA

Power Bipolar Transistor, 6A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BD243B, check out Findchips.com