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BD243CG - onsemi

Description: Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc; Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min) BD243B, BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C; Compact TO-220 AB Package; Pb-Free Packages are Available

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PCB Footprints
BD243CG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
BD243CG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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BD243CG Details

  • Manufacturer Part Number:

    BD243CG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

BD243CG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the BD243CG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the specified thermal boundaries to ensure reliable operation.
  • To ensure the BD243CG is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, it's crucial to ensure the device is operated within its recommended operating conditions, including current and voltage limits.
  • For optimal performance and reliability, it's recommended to follow good PCB layout practices, such as keeping the device away from heat sources, using a solid ground plane, and minimizing trace lengths. Thermal management is also critical, and it's recommended to use a heat sink or thermal pad to dissipate heat effectively. The datasheet provides guidelines for thermal resistance and junction-to-case thermal resistance, which can be used to estimate the required thermal management.
  • While the BD243CG is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, and it's not suitable for high-frequency switching applications. However, it can be used in low-frequency switching applications, such as in power supplies or motor control circuits, as long as the device is operated within its recommended switching frequency and voltage limits.
  • The BD243CG is a sensitive device and requires proper ESD protection to prevent damage. It's recommended to follow standard ESD protection practices, such as using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD-protected workstations. Additionally, it's recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design to protect the device from electrostatic discharge.

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BD243CG Overview

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Part Image BD243C Continental Device India Ltd

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Part Image BD243C JW Miller

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Part Image BD243C Power Innovations International, Inc.

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Part Image BD243C Crimson Semiconductor Inc

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Part Image BD243C Rectron Semiconductor

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