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BD244CG - onsemi

Description: Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc; Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min) BD243B, BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C; Compact TO-220 AB Package; Pb-Free Packages are Available

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PCB Footprints
BD244CG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09 ISSUE AH
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BD244CG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09 ISSUE AH
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BD244CG Details

  • Manufacturer Part Number:

    BD244CG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

BD244CG Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD244CG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by ensuring that the device does not exceed its maximum junction temperature (150°C) and that the power dissipation does not exceed the maximum rated power (2.5W).
  • To ensure the BD244CG is properly biased for linear operation, the base-emitter voltage (VBE) should be set between 0.6V to 0.8V, and the collector-emitter voltage (VCE) should be set between 2V to 10V. The base current (IB) should be limited to ensure the transistor operates within its linear region.
  • For optimal thermal management, the BD244CG should be mounted on a PCB with a copper heat sink or a thermal pad. The PCB layout should ensure good thermal conductivity and minimal thermal resistance. A recommended layout is to have a large copper area under the transistor, with multiple vias connecting to a solid copper plane on the bottom layer.
  • Yes, the BD244CG can be used in a switching application, but it's essential to consider the transistor's switching characteristics, such as the rise and fall times, and the maximum switching frequency. The transistor's saturation voltage and current handling capabilities should also be taken into account to ensure reliable operation.
  • To protect the BD244CG from ESD, it's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-sensitive handling procedures. The device should be stored in an anti-static bag or tube, and the PCB should have ESD protection components, such as TVS diodes or ESD protection arrays.

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BD244CG Overview

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Part Image BD244C Continental Device India Ltd

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD244C Motorola Semiconductor Products

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD244C onsemi

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD244C STMicroelectronics

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BD244C Rectron Semiconductor

Power Bipolar Transistor, 8A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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