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BD442 - STMicroelectronics

Description: BD442, PNP Bipolar Transistor, 4 A 80 V HFE:15 3 MHz Power, 3-Pin SOT-32

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PCB Footprints
BD442 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SOT-32 (TO-126)
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3D Models
BD442 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - SOT-32 (TO-126)
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BD442 Details

  • Manufacturer Part Number:

    BD442

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SIP

  • Package Description:

    PACKSGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    36 W

  • Power Dissipation-Max (Abs):

    36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

  • VCEsat-Max:

    0.8 V

BD442 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the BD442 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure the BD442 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.65-0.75V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, you should also ensure that the base current is sufficient to maintain a stable operating point.
  • The recommended PCB layout and thermal management for the BD442 involve using a thermally conductive PCB material, placing the device on a heat sink or thermal pad, and ensuring good airflow around the device. You should also minimize the thermal resistance between the device and the heat sink by using a thermal interface material (TIM) and ensuring good contact between the device and the heat sink.
  • To protect the BD442 from electrostatic discharge (ESD), you should handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and storing the device in an anti-static package. You should also ensure that the PCB and assembly process are designed to minimize ESD risks.
  • The reliability and lifespan expectations for the BD442 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. However, STMicroelectronics provides reliability data and guidelines for the BD442 in its datasheet and application notes, which can help you estimate the device's expected lifespan and reliability.

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BD442 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image BD442STU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD442 onsemi

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Part Image BD442 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD442S Fairchild Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD442 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BD442, check out Findchips.com