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BD682 - STMicroelectronics

Description: BD682, Darlington Transistor, PNP 4 A 100 V HFE:750, 3-Pin, SOT-32

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Symbol
BD682 - STMicroelectronics - PCB symbol
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PCB Footprints
BD682 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SOT-32
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3D Models
BD682 - STMicroelectronics - 3D model - Transistor Outline, Vertical - SOT-32
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BD682 Details

  • Manufacturer Part Number:

    BD682

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SIP

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    India

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    40 W

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

  • VCEsat-Max:

    2.5 V

BD682 Frequently Asked Questions (FAQs)

  • The BD682 can operate safely between -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source between 2.7V to 5.5V, and the GND pin to a solid ground. Also, decouple the power supply with a 10uF capacitor to minimize noise and ripple.
  • To minimize electromagnetic interference (EMI) and ensure optimal performance, use a multi-layer PCB with a solid ground plane, keep the layout compact, and use short traces. Also, place a 10nF capacitor between the VCC and GND pins to filter out high-frequency noise.
  • Use a voltage regulator or a voltage limiter to prevent overvoltage conditions. For overcurrent protection, add a current-limiting resistor or a fuse in series with the power supply. Additionally, consider using a TVS (Transient Voltage Suppressor) diode to protect against voltage spikes.
  • To ensure proper thermal management, use a heat sink or a thermal pad on the exposed pad of the BD682. Also, ensure good airflow around the device and avoid blocking the airflow with other components or obstacles.

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BD682 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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BD682 Alternates

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Image Part Number Model
Part Image BD682 Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD682 Samsung Semiconductor

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD682T onsemi

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Part Image BD682 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Part Image BD682 onsemi

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
For a full list of alternate parts for BD682, check out Findchips.com