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BDW42G - onsemi

Description: Obsolete - 15 A, 80 V PNP Darlington Bipolar Power Transistor

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PCB Footprints
BDW42G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK**-
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3D Models
BDW42G - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK**-
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BDW42G Details

  • Manufacturer Part Number:

    BDW42G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, COMPACT, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Base Capacitance-Max:

    200 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    250

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    85 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

  • VCEsat-Max:

    3 V

BDW42G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • A gate drive circuit with a dedicated gate driver IC, such as the FAN5350, is recommended. Ensure a low impedance gate drive circuit with a high current capability.
  • Use a shielded enclosure, keep the layout compact, and minimize loop areas. Implement EMI filters, such as common-mode chokes and capacitors, to reduce emissions.
  • The maximum allowed voltage transient is 50 V for a duration of 100 ns. Ensure that the system design can withstand voltage transients within this specification.

Trust Checks

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Manufacturer Collaborated
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BDW42G Overview

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BDW42G Alternates

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Image Part Number Model
Part Image BDW42AU onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42BA onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42BC onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42AJ onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42BD onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BDW42G, check out Findchips.com