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BDX33BG - onsemi

Description: Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C; Monolithic Construction with Build-In Base-Emitter Shunt resistors; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C; High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0; Pb-Free Packages are Available

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BDX33BG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AJ
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BDX33BG - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AJ
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for BDX33BG
  • Part Number BDX33BG
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category Transistor Darlington Pair
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AJ
  • Released Date Nov 28, 2019
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

BDX33BG Details

  • Manufacturer Part Number:

    BDX33BG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    70 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

BDX33BG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BDX33BG is -40°C to 150°C.
  • To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor, and connect the emitter to ground through a resistor. The collector should be connected to a load or a voltage source.
  • The maximum collector current rating for the BDX33BG is 3A.
  • Yes, the BDX33BG can be used as a switch, but it's not recommended due to its relatively low current gain (β) and high saturation voltage. It's better suited for amplifier applications.
  • To calculate the power dissipation, multiply the collector-emitter voltage (VCE) by the collector current (IC). The result is the power dissipation in watts (W).

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BDX33BG Overview

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Part Image BDX33BG Rochester Electronics LLC

10A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN

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Part Image BDX33B Bourns Inc

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Part Image BDX33B-S Bourns Inc

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